US Patent 7889541 2T SRAM cell structure
Patent 7889541 was granted and assigned to Faraday Technology on February, 2011 by the United States Patent and Trademark Office.
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Patent abstract
A SRAM cell structure includes a first N type switch, a second N type switch, a first storage node, and a second storage node. The first N type switch has a control terminal connected to a word line and a first terminal connected to a bit line. The second N type switch has a control terminal connected to the word line and a first terminal connected to an inverted bit line. The first storage node has a first terminal connected to a second terminal of the first N type switch. The second storage node has a first terminal connected to a second terminal of the second N type switch.
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US Patent 07889541 2T SRAM cell structure US Patent 7889541 2T SRAM cell structure
Infobox
Patent Number
0788954100
Patent Number
788954100
Edits on 4 Apr, 2023
Golden AI
Infobox
Is a
Current Assignee
Patent Jurisdiction
Patent Number
078895410
Date of Patent
February 15, 2011
0Patent Application Number
124220780
Date Filed
April 10, 2009
0Official Website
Patent Primary Examiner
Edits on 26 Sep, 2022
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Infobox
Is a
Current Assignee
Patent Jurisdiction
Patent Number
078895410
Date of Patent
February 15, 2011
0Patent Application Number
124220780
Date Filed
April 10, 2009
0Official Website
Patent Primary Examiner
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US Patent 07889541 2T SRAM cell structure
Infobox
Is a
Current assignee
Patent jurisdiction
Patent number
07889541
Date of patent
February 15, 2011
Patent application number
12422078
Date Filed
April 10, 2009
Patent primary examiner
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