Is a
Patent attributes
Patent Jurisdiction
Patent Number
Patent Inventor Names
Kazuaki Nakajima0
Date of Patent
February 22, 2011
Patent Application Number
12403780
Date Filed
March 13, 2009
Patent Primary Examiner
Patent abstract
A method of manufacturing a semiconductor device comprises: forming a gate insulator on a substrate, the gate insulator including a high-dielectric film in whole or part; forming a first metal film on the gate insulator; forming a second metal film on the first metal film; and forming a reaction film between the gate insulator and the first metal film by letting the high-dielectric film and the first metal film react with each other through a thermal treatment.
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