Patent attributes
A high temperature-stable sensor is provided in which electrodes on a substrate or an insulation layer are in contact with a sensitive layer, wherein the electrodes have platinum, rhodium, or iridium or an electrically conductive oxide layer. For this purpose, an intermediate product is provided as a platform chip, which has a deposited layer made of platinum, rhodium, or iridium or an alloy of platinum, rhodium, or iridium and is covered by an electrically conductive oxide. From the deposited layer, a conductive structure is formed and thus a platform chip is created with an electrically conductive structure subject to external influences. This structure has an electrically conductive oxide and/or its parts have long-term, stable characteristic resistance curves under high-temperature loading above about 500° C., especially between about 600° C. and 950° C. A sensor with a gas-sensitive layer formed as a gas-sensitive sensor is preferred.
