Patent attributes
A method of fabricating a CMOS image sensor comprising forming an epitaxial layer on a semiconductor substrate, the epitaxial layer comprising a pixel and logic area, forming an STI layer in the epitaxial layer, forming a plurality of wells and a gate pattern having a spacer on the epitaxial layer, forming a plurality of source and drain regions in the epitaxial layer using ion implantation, forming a salicide blocking layer on the epitaxial layer and gate pattern in the pixel area, forming a plurality of silicide layers in the logic area by performing a silicidation process, sequentially forming a PMD liner nitride layer and a PSG layer on the salicide blocking layer in the pixel area and the epitaxial layer and the gate pattern in the logic area, and forming a plurality of contacts connecting the PSG layer to the source and drain regions.
