Is a
Patent attributes
Current Assignee
Patent Jurisdiction
Patent Number
Date of Patent
March 1, 2011
Patent Application Number
11770593
Date Filed
June 28, 2007
Patent Primary Examiner
Patent abstract
The present application is directed to a method for forming a metal silicide layer. The method comprises providing a substrate comprising silicon and depositing a metal layer on the substrate. The metal layer is annealed within a first temperature range and for a first dwell time of about 10 milliseconds or less to react at least a portion of the metal with the silicon to form a silicide. An unreacted portion of the metal is removed from the substrate. The silicide is annealed within a second temperature range for a second dwell time of about 10 milliseconds or less.
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