US Patent 7898004 Semiconductor heterostructure diodes
Patent 7898004 was granted and assigned to Transphorm Inc. on March, 2011 by the United States Patent and Trademark Office.
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Patent abstract
Planar Schottky diodes for which the semiconductor material includes a heterojunction which induces a 2DEG in at least one of the semiconductor layers. A metal anode contact is on top of the upper semiconductor layer and forms a Schottky contact with that layer. A metal cathode contact is connected to the 2DEG, forming an ohmic contact with the layer containing the 2DEG.
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US Patent 07898004 Semiconductor heterostructure diodes US Patent 7898004 Semiconductor heterostructure diodes
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Patent Number
0789800400
Patent Number
789800400
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Is a
Current Assignee
Patent Jurisdiction
Patent Number
078980040
Date of Patent
March 1, 2011
0Patent Application Number
123322840
Date Filed
December 10, 2008
0Official Website
Patent Primary Examiner
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Infobox
Is a
Current Assignee
Patent Jurisdiction
Patent Number
078980040
Date of Patent
March 1, 2011
0Patent Application Number
123322840
Date Filed
December 10, 2008
0Official Website
Patent Primary Examiner
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US Patent 07898004 Semiconductor heterostructure diodes
Infobox
Is a
Current assignee
Patent jurisdiction
Patent number
07898004
Date of patent
March 1, 2011
Patent application number
12332284
Date Filed
December 10, 2008
Patent primary examiner
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