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US Patent 7898852 Trapped-charge non-volatile memory with uniform multilevel programming

Patent 7898852 was granted and assigned to Cypress Semiconductor Corporation on March, 2011 by the United States Patent and Trademark Office.

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Patent abstract

Methods and apparatus for programming and sensing a bi-nitride layer trapped-charge memory device in one of a first and second programmed states or one of a first and second erased states, where the first and second programmed states correspond to first and second uniform trapped charge distributions of a first charge type and the first and second erased states correspond to first and second uniform trapped charge distributions of a second charge type.

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