Is a
Patent attributes
Current Assignee
Patent Jurisdiction
Patent Number
Date of Patent
March 8, 2011
Patent Application Number
12561994
Date Filed
September 17, 2009
Patent Primary Examiner
Patent abstract
The invention includes a method of forming a semiconductor construction, such as an MRAM construction. A block is formed over a semiconductor substrate. First and second layers are formed over the block, and over a region of the substrate proximate the block. The first and second layers are removed from over the block while leaving portions of the first and second layers over the region proximate the block. At least some of the first layer is removed from under the second layer to form a channel over the region proximate the block. A material, such as a soft magnetic material, is provided within the channel. The invention also includes semiconductor constructions.
Timeline
No Timeline data yet.
Further Resources
No Further Resources data yet.
