Is a
Patent attributes
Current Assignee
Patent Jurisdiction
Patent Number
Patent Inventor Names
Masashi Nakata0
Itaru Oshiyama0
Kaori Tai0
Masanori Tsukamoto0
Date of Patent
March 8, 2011
Patent Application Number
12712809
Date Filed
February 25, 2010
Patent Primary Examiner
Patent abstract
A semiconductor device including an N-channel insulated gate field effect transistor and a P-channel insulated gate field effect transistor, the device having: a first insulating layer and a second insulating layer; and gate electrode contact plugs. Each of the gate electrodes of the N-channel insulated gate field effect transistor and the P-channel insulated gate field effect transistor is buried in a gate electrode formation opening provided in the first insulating layer.
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