Is a
Patent attributes
Patent Jurisdiction
Patent Number
Patent Inventor Names
Yosuke Ide0
Masamichi Saito0
Naoya Hasegawa0
Ryo Nakabayashi0
Kazumasa Nishimura0
Masahiko Ishizone0
Date of Patent
March 15, 2011
0Patent Application Number
118515700
Date Filed
September 7, 2007
0Patent Primary Examiner
Patent abstract
A tunneling magnetic sensing element including an Mg—O insulating barrier which can maintain favorable soft-magnetic properties of a free magnetic layer and can have a high resistance change ratio (ΔR/R) compared to known tunnel magnetic sensing elements is disclosed, and a method of manufacturing such a tunneling magnetic sensing element is also disclosed. An enhance layer (second magnetic layer) composed of Co100-XFeX having a Fe composition ratio X of about 30 to 100 at % is disposed on the Mg—O insulating barrier. With this, the magnetostriction λ of the free magnetic layer can be reduced and the resistance change ratio (ΔR/R) can be increased.
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