Patent 7909678 was granted and assigned to Schott AG on March, 2011 by the United States Patent and Trademark Office.
A method of manufacturing silicon wafers that include a front surface and a block surface and lateral edges, includes forming a silicon wafer by separating a rectangular, in particular, silicon block with lateral surfaces and before separation, grounding and/or polishing the lateral surfaces of the silicon block parallel to the edge of the silicon wafer.