US Patent 7910394 Photodiode with improved charge capacity
Patent 7910394 was granted and assigned to Foveon on March, 2011 by the United States Patent and Trademark Office.
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Patent abstract
A method for forming a photodiode cathode in an integrated circuit imager includes defining and implanting a photodiode cathode region with a photodiode cathode implant dose of a dopant species and defining and implanting an edge region of the photodiode cathode region with a photodiode cathode edge implant dose of a dopant species to form a region of higher impurity concentration than the photodiode cathode impurity concentration.
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Patent Inventor Names
Maxim Ershov0
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Official Website
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US Patent 07910394 Photodiode with improved charge capacity US Patent 7910394 Photodiode with improved charge capacity
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Patent Number
079103940
Patent Number
79103940
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Is a
Current Assignee
Patent Jurisdiction
Patent Number
079103940
Date of Patent
March 22, 2011
0Patent Application Number
120607020
Date Filed
April 1, 2008
0Official Website
Patent Primary Examiner
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US Patent 07910394 Photodiode with improved charge capacity
Infobox
Is a
Current assignee
Patent jurisdiction
Patent number
07910394
Date of patent
March 22, 2011
Patent application number
12060702
Date Filed
April 1, 2008
Patent primary examiner
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