Patent attributes
A hybrid broadband power amplifier module design is disclosed. In a power amplifier design, low impedance transmission lines are typically needed at the input and output of the transistor to match for its optimum source and load impedance. The peripheral of the GaN (Gallium Nitride) transistor is very small due to the high power density of the GaN transistor. The transmission line, for example a microstrip line, needs to be very wide to achieve low impedance on ceramic substrates such as Alumina. The dimensional mismatch from the low impedance transmission line to the transistor causes additional parasitic effect to the matching networks and limits the bandwidth of the amplifier. Capacitor materials are typically very high in dielectric constant; hence a single layer capacitor with small dimensions equalizes to a low impedance transmission line. Selected capacitors with proper dimensions can be used as the low impedance transmission lines in the matching networks. They will have comparable width to the GaN transistor and minimize the parasitic effect. The wavelength inside the capacitor will also be very short due to the high dielectric constant; hence the matching network can be much shorter. A compact hybrid amplifier module has been built in a small package with the GaN transistor, capacitor matching networks and other necessary circuits inside. More than an octave bandwidth can be achieved with this new scheme.
