Is a
Patent attributes
Current Assignee
Patent Jurisdiction
Patent Number
Patent Inventor Names
Ryo Nakagawa0
Takayuki Yamada0
Date of Patent
March 29, 2011
0Patent Application Number
129140260
Date Filed
October 28, 2010
0Patent Primary Examiner
Patent abstract
A semiconductor device includes: an isolation region formed in a semiconductor substrate; active regions surrounded by the isolation region and including p-type and n-type regions, respectively; an NMOS transistor formed in the active region including the p-type region and including an n-type gate electrode; a PMOS transistor formed in the active region including the n-type region and including a p-type gate electrode; and a p-type resistor formed on the isolation region. The p-type resistor has an internal stress greater than that of the p-type gate electrode.
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