Is a
Patent attributes
Current Assignee
Patent Jurisdiction
Patent Number
Patent Inventor Names
Tomoe Nakayama0
Yoshinori Osaki0
Hiroshi Kobayashi0
Tetsuro Takahashi0
Yoshihiro Sato0
Date of Patent
March 29, 2011
Patent Application Number
11718582
Date Filed
November 2, 2005
Patent Citations Received
Patent Primary Examiner
Patent abstract
In a method for forming an insulating film by performing plasma nitriding process to an oxide film on a substrate and then by annealing the substrate in a process chamber (51), the substrate is annealed under a low pressure of 667 Pa or lower. The annealing is performed for 5 or 45 seconds. The plasma nitriding process is performed by microwave plasma by using a planar antenna whereupon a multitude of slot holes are formed.
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