Is a
Patent attributes
Patent Jurisdiction
Patent Number
Patent Inventor Names
Takanori Nakano0
Yoshiyuki Nasuno0
Yasuaki Ishikawa0
Date of Patent
March 29, 2011
0Patent Application Number
119700430
Date Filed
January 7, 2008
0Patent Primary Examiner
Patent abstract
A photoelectric conversion device includes a p-type layer, an i-type layer and an n-type layer each made of a silicon base semiconductor, stacked in this order, wherein the i-type layer contains n-type impurities in a concentration of 1.0×1016 to 2.0×1017 cm−3.
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