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US Patent 7915643 Enhancement mode gallium nitride power devices

Patent 7915643 was granted and assigned to Transphorm Inc. on March, 2011 by the United States Patent and Trademark Office.

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Patent abstract

Enhancement mode III-nitride devices are described. The 2DEG is depleted in the gate region so that the device is unable to conduct current when no bias is applied at the gate. Both gallium face and nitride face devices formed as enhancement mode devices.

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