Is a
Patent attributes
Current Assignee
0
Patent Jurisdiction
Patent Number
Patent Inventor Names
Yifeng Wu0
Marcia Moore0
Primit Parikh0
Umesh Mishra0
Date of Patent
March 29, 2011
0Patent Application Number
124375050
Date Filed
May 7, 2009
0Patent Primary Examiner
Patent abstract
A HEMT comprising an active region comprising a plurality of active semiconductor layers formed on a substrate. Source electrode, drain electrode, and gate are formed in electrical contact with the active region. A spacer layer is formed on at least a portion of a surface of said active region and covering the gate. A field plate is formed on the spacer layer and electrically connected to the source electrode, wherein the field plate reduces the peak operating electric field in the HEMT.
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