Is a
Patent attributes
Current Assignee
Patent Jurisdiction
Patent Number
Date of Patent
March 29, 2011
Patent Application Number
12043813
Date Filed
March 6, 2008
Patent Primary Examiner
Patent abstract
A method that includes forming a semiconductor fin, forming a sacrificial material adjacent the semiconductor fin, covering the sacrificial material with a dielectric material, forming a cavity by removing the sacrificial material from under the dielectric material, and forming a gate in the cavity. System and devices are also provided.
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