Patent 7915681 was granted and assigned to Infineon Technologies on March, 2011 by the United States Patent and Trademark Office.
A device includes a first transistor including a fin and a second transistor including a fin, the fin of the first transistor having a lower charge carrier mobility than the fin of the second transistor. In a method, the fin of the first transistor is treated to have a lower charge carrier mobility than the fin of the second transistor.