Is a
Patent attributes
Patent Jurisdiction
Patent Number
Patent Inventor Names
Tsutomu Hayakawa0
Date of Patent
April 5, 2011
Patent Application Number
11812752
Date Filed
June 21, 2007
Patent Primary Examiner
Patent abstract
A semiconductor memory device comprises a heater electrode, a phase change portion, a heat insulation portion and an upper electrode. The phase change portion comprises a concave portion and a contact portion. The concave portion is in contact with the heater electrode. The contact portion is formed integrally with the concave portion. The heat insulation portion is formed in the concave portion. The upper electrode is formed on the contact portion and the heat insulation portion so that the heat insulation portion is positioned between the concave portion and the upper electrode.
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