Is a
Patent attributes
Current Assignee
Patent Jurisdiction
Patent Number
Patent Inventor Names
Saichiro Kaneko0
Takashi Kunimatsu0
Date of Patent
April 5, 2011
0Patent Application Number
119567150
Date Filed
December 14, 2007
0Patent Primary Examiner
Patent abstract
A semiconductor device includes a principal IGBT controllable in accordance with a gate voltage applied to a gate electrode thereof, a current detecting IGBT connected to the principal IGBT in parallel and a current detecting part including a detecting resistor capable of detecting a current passing through the current detecting IGBT. The base region of the current detecting IGBT and the emitter region of the principal IGBT are electrically connected to each other, and the emitter region of the current detecting IGBT and the emitter region of the principal IGBT are electrically connected to each other through the detecting resistor.
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