Is a
Patent attributes
Patent Jurisdiction
Patent Number
Patent Inventor Names
Yan-Nan Li0
Hsueh-Li Chiang0
Date of Patent
April 5, 2011
Patent Application Number
12100394
Date Filed
April 9, 2008
Patent Primary Examiner
Patent abstract
An integrated circuit includes a diffusion layer, a first poly-silicon layer, and a second poly-silicon layer. The first poly-silicon layer is located on the diffusion layer to form a transistor. The second poly-silicon includes a first section and a second section. The first section of the second poly-silicon layer is located on the first poly-silicon layer to form a capacitor. The second section of the second poly-silicon layer is located on the diffusion layer to form a resistor.
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