Is a
Patent attributes
Patent Jurisdiction
Patent Number
Patent Inventor Names
Cheng-Lin Huang0
Date of Patent
April 5, 2011
Patent Application Number
11429879
Date Filed
May 8, 2006
Patent Primary Examiner
Patent abstract
An integrated circuit structure having improved resistivity and a method for forming the same are provided. The integrated circuit structure includes a dielectric layer, an opening in the dielectric layer, an oxide-based barrier layer directly on sidewalls of the opening, and conductive materials filling the remaining portion of the opening.
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