Is a
Patent attributes
Patent Jurisdiction
Patent Number
Patent Inventor Names
Yasutaka Sakata0
Date of Patent
April 5, 2011
0Patent Application Number
122457800
Date Filed
October 6, 2008
0Patent Primary Examiner
Patent abstract
The reliability of a buried hetero-structure semiconductor laser is improved by preventing an increase in oscillation threshold current and a decrease in external differential quantum efficiency in cases where the semiconductor laser is energized continuously under conditions of high temperature and high optical output. An optical semiconductor laser has an optical waveguide structure comprising an n-type cladding layer, an active layer and p-type cladding layers, and a current narrowing/blocking structure comprising a p-type blocking layer and an n-type blocking layer, wherein concentration of hydrogen contained in the p-type cladding layers is higher than concentration of hydrogen contained in the p-type blocking layer.
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