The present invention includes the steps of providing a substrate having a main surface; depositing a dual-metal layer such as Mo/AlNd, MoW/AlNd, MoW/Al onto the main surface of the substrate; defining gate and word line patter using a layer of photoresist; and using the photoresist as an etching mask, a first metal dry etching process is carried out to etch the dual-metal layer at an etching selectivity that is significantly higher than prior art. The first metal dry etching process uses oxygen/fluorine containing etching gas mixture and oxygen/chlorine containing etching gas mixture to form the dual-metal gate and word line pattern having slightly oblique sidewalls. End point detection mode detected at 704 nm is used in the first metal dry etching process.