Is a
Patent attributes
Current Assignee
Patent Jurisdiction
Patent Number
Patent Inventor Names
Beng S. Ong0
Yiliang Wu0
Date of Patent
April 12, 2011
Patent Application Number
11564438
Date Filed
November 29, 2006
Patent Primary Examiner
Patent abstract
A thin-film transistor (TFT) with dual-layer source and drain electrodes is provided. Each source and drain electrode comprises a first layer and a second layer. The first layer has a work function which differs from the energy level of the semiconductor by at least 0.5 eV and the second layer has a work function matching the energy level of the semiconductor. The semiconductor has a short channel length.
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