Is a
Patent attributes
Current Assignee
0
Patent Jurisdiction
Patent Number
Patent Inventor Names
Kojiro Nagaoka0
Date of Patent
April 12, 2011
0Patent Application Number
123643430
Date Filed
February 2, 2009
0Patent Primary Examiner
Patent abstract
Disclosed herein is a semiconductor device, including: an insulating film provided on a semiconductor substrate so as to have a trench pattern; a gate insulating film provided so as to cover an inner wall of the trench pattern; and a gate electrode formed so as to be filled in the trench pattern through the gate insulating film and so as to protrude more widely than the trench pattern on both sides of the trench pattern on the insulating film.
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