US Patent 7923765 Non-volatile memory device

A non-volatile memory device includes a memory cell region which is formed on a semiconductor substrate to store predetermined information, and a peripheral circuit region which is formed on the semiconductor substrate. The memory cell region includes a gate electrode; and a charge storage layer, the charge storage layer being formed to be a notch or wedge shape having an edge extending into both sides of a bottom end of the gate electrode. The peripheral circuit region includes no charge storage layer therein.