Is a
Patent attributes
Patent Jurisdiction
Patent Number
Date of Patent
April 12, 2011
Patent Application Number
12333224
Date Filed
December 11, 2008
Patent Primary Examiner
Patent abstract
A semiconductor device includes a plurality of trench patterns formed over a substrate; gate insulation layers formed over sidewalls of the trench patterns; gate electrodes formed over the trench patterns; line patterns coupling the gate electrodes; and source and drain regions formed in upper and lower portions of the substrate adjacent to the sidewalls of the trench patterns.
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