US Patent 7924629 Three-dimensional memory device and programming method

A programming method and a three-dimensional memory device are disclosed. The three-dimensional memory device includes a stacked plurality of layers, each layer having a memory array, and each memory array having a string of memory cells. The programming method includes, for each unselected string associated with an unselected layer in the plurality of layers, charging the channel of memory cells associated with unselected string with a shut-off voltage, and thereafter programming a selected string associated with a selected layer in the plurality of layers.