Is a
Patent attributes
Patent Jurisdiction
Patent Number
Date of Patent
April 19, 2011
Patent Application Number
11666373
Date Filed
October 3, 2006
Patent Primary Examiner
Patent abstract
A means for effectively preventing the temperature rise of the diode when the bypass diode is operating in a terminal box for a crystalline silicon solar cell panel is provided. The present invention is characterized in that, in the terminal box for a crystalline silicon solar cell panel, Schottky barrier diode is used as a bypass diode. Preferably, the forward-direction voltage drop of the Schottky barrier diode is the specific value or below at the specific junction temperature. Preferably, as a Schottky barrier diode, a package diode which is surface-mounting type or non-insulation type is used.
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