US Patent 7928469 MOSFET and method for manufacturing MOSFET
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Patent abstract
The present invention provides a MOSFET and so forth that offer high breakdown voltage and low on-state loss (high channel mobility and low gate threshold voltage) and that can easily achieve normally OFF. A drift layer 2 of a MOSFET made of silicon carbide according to the present invention has a first region 2a and a second region 2b. The first region 2a is a region from the surface to a first given depth. The second region 2b is formed in a region deeper than the first given depth. The impurity concentration of the first region 2a is lower than the impurity concentration of the second region 2b.
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Patent Inventor Names
Keiko Fujihira0
Kenichi Ohtsuka0
Masayuki Imaizumi0
Naruhisa Miura0
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US Patent 07928469 MOSFET and method for manufacturing MOSFET US Patent 7928469 MOSFET and method for manufacturing MOSFET
Infobox
Patent Number
079284690
Patent Number
79284690
Edits on 29 Mar, 2023
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Patent Jurisdiction
Patent Number
079284690
Date of Patent
April 19, 2011
0Patent Application Number
120904510
Date Filed
October 6, 2006
0Official Website
Patent Primary Examiner
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US Patent 07928469 MOSFET and method for manufacturing MOSFET
Infobox
Is a
Patent jurisdiction
Patent number
07928469
Date of patent
April 19, 2011
Patent application number
12090451
Date Filed
October 6, 2006
Patent primary examiner
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