Is a
Patent attributes
Patent Jurisdiction
Patent Number
Patent Inventor Names
Eiji Sakagami0
Makoto Nakashima0
Date of Patent
April 19, 2011
Patent Application Number
12570767
Date Filed
September 30, 2009
Patent Primary Examiner
Patent abstract
The semiconductor device of the present invention includes a semiconductor substrate, a plurality of floating gate electrodes formed in a memory cell forming region of the semiconductor substrate, a word line electrically connecting the floating gate electrodes and a conductor portion formed on the word line so as to reduce a resistance of the word line.
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