US Patent 7928509 Integrated JFET and schottky diode
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Patent abstract
The present invention discloses an integrated junction field effect transistor (JFET) and Schottky diode, comprising a depletion mode JFET which includes a source, a drain and a gate, wherein the drain is not provided with an ohmic contact such that it forms a Schottky diode.
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Patent Inventor Names
Chih-Feng Huang0
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US Patent 07928509 Integrated JFET and schottky diode US Patent 7928509 Integrated JFET and schottky diode
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Patent Number
07928509
Patent Number
7928509
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Official Website
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US Patent 07928509 Integrated JFET and schottky diode
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Is a
Patent jurisdiction
Patent number
07928509
Date of patent
April 19, 2011
Patent application number
12470391
Date Filed
May 21, 2009
Patent primary examiner
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