Is a
Patent attributes
Current Assignee
0
Patent Jurisdiction
Patent Number
Patent Inventor Names
Kun-Hsien Lee0
Shyh-Fann Ting0
Li-Shian Jeng0
Wen-Han Hung0
Tzyy-Ming Cheng0
Cheng-Tung Huang0
Chia-Wen Lang0
Date of Patent
April 19, 2011
0Patent Application Number
117765620
Date Filed
July 12, 2007
0Patent Primary Examiner
Patent abstract
A semiconductor device is provided herein, which includes a substrate having a first-type MOS transistor, an input/output (I/O) second-type MOS transistor, and a core second-type MOS transistor formed thereon. The semiconductor device further includes a first stress layer and a second stress layer. The first stress layer is disposed on the first-type MOS transistor, or on the first-type MOS transistor and the I/O second-type MOS transistor. The second stress layer is disposed on the core second-type MOS transistor.
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