US Patent 7929349 Method of operating nonvolatile memory device
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Patent abstract
Provided is a method of operating a nonvolatile memory device to perform a programming operation or an erase operation. The method includes applying a composite pulse including a direct current (DC) pulse and an AC perturbation pulse to the nonvolatile memory device to perform the programming operation or the erase operation.
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Patent Inventor Names
Jong-seob Kim0
Kwang-soo Seol0
Sang-jin Park0
Sung-hoon Lee0
Sung-il Park0
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US Patent 07929349 Method of operating nonvolatile memory device US Patent 7929349 Method of operating nonvolatile memory device
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Patent Number
079293490
Patent Number
79293490
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Patent Jurisdiction
Patent Number
079293490
Date of Patent
April 19, 2011
0Patent Application Number
120719610
Date Filed
February 28, 2008
0Official Website
Patent Primary Examiner
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US Patent 07929349 Method of operating nonvolatile memory device
Infobox
Is a
Patent jurisdiction
Patent number
07929349
Date of patent
April 19, 2011
Patent application number
12071961
Date Filed
February 28, 2008
Patent primary examiner
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