Is a
Patent attributes
Current Assignee
0
Patent Jurisdiction
Patent Number
Patent Inventor Names
Shian-Jyh Lin0
Pei-Ing Lee0
Date of Patent
April 26, 2011
0Patent Application Number
119497880
Date Filed
December 4, 2007
0Patent Primary Examiner
Patent abstract
A transistor structure includes a gate trench. The gate trench includes a bottle-shape bottom. The bottle-shape bottom includes a first conductive material wider than its top. The top includes a second material in a substrate, a gate structure on the gate trench and electrically connected to the first conductive material, a source/drain doping region adjacent to the gate trench and a gate channel between the source/drain doping region.
Timeline
No Timeline data yet.
Further Resources
No Further Resources data yet.
