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US Patent 7932571 Magnetic element having reduced current density

Patent 7932571 was granted and assigned to Everspin Technologies on April, 2011 by the United States Patent and Trademark Office.

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Patent abstract

A memory device includes a fixed magnetic layer, a tunnel barrier layer over the fixed magnetic layer, and a free magnetic structure formed over the tunnel barrier layer, wherein the free magnetic structure has layers or sub-layers that are weakly magnetically coupled. Thus, a low programming voltage can be used to avoid tunnel barrier breakdown, and a small pass transistor can be used to save die real estate.

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