US Patent 7932581 Lateral bipolar junction transistor

A lateral bipolar junction transistor includes an emitter region; a base region surrounding the emitter region; a gate disposed at least over a portion of the base region; a collector region surrounding the base region with an offset between an edge of the gate and the collector region; a lightly doped drain region between the edge of the gate and the collector region; a salicide block layer disposed on or over the lightly doped drain region; and a collector salicide formed on at least a portion of the collector region.