Patent attributes
Method for annealing at least one photovoltaic cell comprising a substrate based on silicon with a first type of conductivity, a layer doped with a second type of conductivity produced in the substrate and forming a front face of the substrate, an antireflection layer produced on the front face of the substrate and forming a front face of the photovoltaic cell, at least one metallization on the front face of the cell and at least on metallization on a rear face of the substrate. This method comprises at least the steps of:a) a first annealing of the photovoltaic cell at a temperature between around 700° C. and 900° C.,b) a second annealing of the photovoltaic cell at a temperature between around 200° C. and 500° C., at ambient pressure and in ambient air,with hydrogen being diffused in the substrate during the process.
