Is a
Patent attributes
Patent Jurisdiction
Patent Number
Date of Patent
May 3, 2011
Patent Application Number
11581346
Date Filed
October 17, 2006
Patent Primary Examiner
Patent abstract
A method for manufacturing a semiconductor device whereby the process is simplified and high performance can be obtained in both a trench-gate transistor and a planar transistor that has a thin gate insulating film when the two transistors are formed on the same semiconductor substrate. In a state in which the gate insulating film (11s) in a peripheral circuit region PE is covered by a protective film (12), a gate trench (18) is formed in a memory cell region M, after which a gate insulating film (19) that is thicker than the gate insulating film (11s) is formed on an inner wall of the gate trench (18) in a state in which the gate insulating film (11s) of the peripheral circuit region PE is still covered by the protective film (12).
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