Is a
Patent attributes
Current Assignee
Patent Jurisdiction
Patent Number
Patent Inventor Names
Yuhao Luo0
Daniel Gitlin0
Deepak Kumar Nayak0
Date of Patent
May 3, 2011
0Patent Application Number
112445660
Date Filed
October 6, 2005
0Patent Primary Examiner
Patent abstract
An MOS device has an embedded dielectric structure underlying an active portion of the device, such as a source extension or a drain extension. In an alternative embodiment, an embedded dielectric structure underlies the channel region of a MOS device, as well as the source and drain extensions.
Timeline
No Timeline data yet.
Further Resources
No Further Resources data yet.
