Patent attributes
A magnetoresistance effect element according to the present invention comprises a magnetization free layer 1 and a magnetization fixed layer 3 connected to the magnetization free layer 1 through a nonmagnetic layer 2. The magnetization free layer 1 includes a magnetization switching region 13, a first magnetization fixed region 11 and a second magnetization fixed region 12. The magnetization switching region 13 having reversible magnetization overlaps with the magnetization fixed layer 3. The first magnetization fixed region 11 having first fixed magnetization is connected to one end 13a of the magnetization switching region 13. The second magnetization fixed region 12 having second fixed magnetization is connected to the other end 13b of the magnetization switching region 13. The first magnetization fixed region 11 and the magnetization switching region 13 form a three-way intersection, and the second magnetization fixed region 12 and the magnetization switching region 13 form another three-way intersection.
