Is a
Patent attributes
Patent Jurisdiction
Patent Number
Patent Inventor Names
Daigaku Kimura0
Mayuko Fudeta0
Norikatsu Koide0
Toshio Hata0
Date of Patent
May 10, 2011
Patent Application Number
11494845
Date Filed
July 27, 2006
Patent Primary Examiner
Patent abstract
The nitride-based semiconductor light-emitting device and manufacturing method thereof are disclosed: the nitride-based semiconductor light-emitting device includes a reflective layer formed on a support substrate, a p-type nitride-based semiconductor layer, a light-emitting layer and an n-type nitride-based semiconductor layer successively formed on the reflective layer, wherein irregularities are formed on a light extracting surface located above the n-type nitride-based semiconductor layer.
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