Is a
Patent attributes
Current Assignee
Patent Jurisdiction
Patent Number
Date of Patent
May 10, 2011
Patent Application Number
12619352
Date Filed
November 16, 2009
Patent Primary Examiner
Patent abstract
A method of manufacturing a single-electron transistor device is provided. The method includes forming a thinned region in a silicon substrate, the thinned region offset by a non-selected region. The method also includes forming at least one quantum island from the thinned region by subjecting the thinned region to an annealing process. The non-selected region is aligned with the quantum island and tunnel junctions are formed between the quantum island and the non-selected region. The present invention also includes a single-electron device, and a method of manufacturing an integrated circuit that includes a single-electron device.
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