Is a
Patent attributes
Patent Jurisdiction
Patent Number
Patent Inventor Names
Shinichi Kohda0
Date of Patent
May 10, 2011
0Patent Application Number
122195390
Date Filed
July 23, 2008
0Patent Primary Examiner
Patent abstract
A method of manufacturing a nitride semiconductor device includes the steps of: forming a division guide groove by applying a laser beam having a wavelength and energy density causing multiphoton absorption to a surface of a substrate having a group III nitride semiconductor layer grown on a major surface thereof; removing deposits from the surface of the substrate by applying a laser beam having the wavelength to the surface of the substrate at energy density causing substantially no multiphoton absorption on the substrate; and dividing the substrate along the division guide groove.
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