Patent attributes
There is provided a nitride semiconductor light emitting device having high internal quantum efficiency by accelerating recombination radiation while employing a multiple quantum well structure in which each of well layers has a relatively large thickness. The nitride semiconductor light emitting device is provided with a nitride semiconductor lamination portion (6) provided on a substrate (1). The nitride semiconductor lamination portion (6) includes at least an active layer (4) in which a light emitting portion is formed. And the active layer is constituted with a multiple quantum well structure formed by laminating well layers (7) made of InxGa1-xN (0<x≦1), and barrier layers (8) made of AlyInzGa1-y-zN (0≦y<1, 0≦z<1, 0≦y+z<1, z<x) alternately. In addition, one of the well layers is divided at least into a first well layer (7a) and a second well layer (7b) by a thin film barrier layer (7c) made of AlvInwGa1-v-wN (0≦v<1, 0≦w<1, 0≦v+w<1, w<x), and the thin film barrier layer is formed so as to have a thickness of one atomic layer or more and 20 Angstroms or less.
