Is a
Patent attributes
Patent Jurisdiction
Patent Number
Patent Inventor Names
Sang-Yeop Han0
Se-Ra Won0
Date of Patent
May 10, 2011
Patent Application Number
12538747
Date Filed
August 10, 2009
Patent Primary Examiner
Patent abstract
A semiconductor device includes a substrate, first, second, and third gate lines disposed over the substrate, the first and second gate lines defining a first trench with a first aspect ratio, the second and third gate lines defining a second trench with a second aspect ratio, a first insulating layer formed to decrease the first and second aspect ratios, and a second insulating layer disposed over the first insulating layer to fill the first and second trenches.
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