Is a
Patent attributes
Patent Jurisdiction
Patent Number
Patent Inventor Names
Michael A Wyatt0
Date of Patent
May 10, 2011
0Patent Application Number
125461120
Date Filed
August 24, 2009
0Patent Primary Examiner
Patent abstract
A composite device includes a depletion mode FET coupled to a bipolar transistor. The FET includes gate, drain and source terminals, and the bipolar transistor includes base, collector and emitter terminals. The collector terminal of the bipolar transistor and the source terminal of the depletion mode FET are directly connected to each other. Additionally, the emitter terminal of the bipolar transistor and the gate terminal of the depletion mode FET are directly connected to each other. The voltage between the collector and emitter terminals, VCE, is configured to bias the depletion mode FET. The VCE voltage has a value that is equal and opposite to a voltage VGS between the gate and source terminals of the depletion mode FET.
Timeline
No Timeline data yet.
Further Resources
No Further Resources data yet.
